Graphene/hBN–based valley transistor: Dynamic control of valley current in synchronized nonzero voltages within the time-dependent regimeRemoveA. Belayadi, C. I. Osuala, I. Assi, N. A. Hadadi, J. P. F. LeBlanc, and A. AbboutPhys. Rev. B 112, 165411 (2025)
Influence of nitrogen doping and annealing on the silicon vacancy in 4H−SiCRemoveSamuel G. Carter, Infiter Tathfif, Charity Burgess, Brenda VanMil, Suryakanti Debata, and Pratibha DevPhys. Rev. B 112, 085209 (2025)
Tackling the one-electron self-interaction error within the semilocal density functional frameworkRemoveAkilan Ramasamy, Lin Hou, Jorge Vega Bazantes, Tom J. P. Irons, Andrew M. Wibowo-Teale, Timo Lebeda, and Jianwei SunPhys. Rev. B 112, L161112 (2025)
Preparing code states via seed-entangler-enriched sequential quantum circuits: Application to tetradigit topological error-correcting codesRemoveYu-Tao Hu, Meng-Yuan Li, and Peng YePhys. Rev. B 112, 165139 (2025)
