Weak Antilocalization in Epitaxial Graphene: Evidence for Chiral Electrons

Phys. Rev. Lett. 98, 136801 – Published 27 March 2007
Xiaosong Wu, Xuebin Li, Zhimin Song, Claire Berger, and Walt A. de Heer

Abstract

Transport in ultrathin graphite grown on silicon carbide is dominated by the electron-doped epitaxial layer at the interface. Weak antilocalization in 2D samples manifests itself as a broad cusplike depression in the longitudinal resistance for magnetic fields 10mT<B<5T. An extremely sharp weak-localization resistance peak at B=0 is also observed. These features quantitatively agree with graphene weak-(anti)localization theory implying the chiral electronic character of the samples. Scattering contributions from the trapped charges in the substrate and from trigonal warping due to the graphite layer on top are tentatively identified. The Shubnikov–de Haas oscillations are remarkably small and show an anomalous Berry’s phase.

DOI: http://dx.doi.org/10.1103/PhysRevLett.98.136801

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 24 October 2006
  • Published 27 March 2007

© 2007 The American Physical Society

Authors & Affiliations

Xiaosong Wu1, Xuebin Li1, Zhimin Song1, Claire Berger1,2, and Walt A. de Heer1

  • 1School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
  • 2LEPES/CNRS-Institut Néel, BP 166, 38042 Grenoble cedex6, France

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Authorization Required


×
×

Images

×

Log In

Cancel
×

Search


Article Lookup
Paste a citation or DOI

Enter a citation
×