Carbon Nanotubes as Schottky Barrier Transistors

Phys. Rev. Lett. 89, 106801 – Published 15 August 2002
S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appenzeller, and Ph. Avouris

Abstract

We show that carbon nanotube transistors operate as unconventional “Schottky barrier transistors,” in which transistor action occurs primarily by varying the contact resistance rather than the channel conductance. Transistor characteristics are calculated for both idealized and realistic geometries, and scaling behavior is demonstrated. Our results explain a variety of experimental observations, including the quite different effects of doping and adsorbed gases. The electrode geometry is shown to be crucial for good device performance.

DOI: http://dx.doi.org/10.1103/PhysRevLett.89.106801

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  • Received 16 March 2002
  • Published 15 August 2002

© 2002 The American Physical Society

Authors & Affiliations

S. Heinze, J. Tersoff*, R. Martel, V. Derycke, J. Appenzeller, and Ph. Avouris

  • IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598

  • *Electronic address: tersoff@us.ibm.com
  • Electronic address: avouris@us.ibm.com

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