Enhancement of Tunneling from a Correlated 2D Electron System by a Many-Electron Mössbauer-Type Recoil in a Magnetic Field

Phys. Rev. Lett. 86, 2408 – Published 12 March 2001
M. I. Dykman, T. Sharpee, and P. M. Platzman

Abstract

We consider the effect of electron correlations on tunneling from a 2D electron layer in a magnetic field parallel to the layer. A tunneling electron can exchange its momentum with other electrons, which leads to an exponential increase of the tunneling rate compared to the single-electron approximation. The effect depends on the interrelation between the dynamics of tunneling and momentum exchange. The results explain and provide a no-parameter fit to the data on electrons on helium. We also discuss tunneling in semiconductor heterostructures.

DOI: http://dx.doi.org/10.1103/PhysRevLett.86.2408

  • Received 19 July 2000
  • Published in the issue dated 12 March 2001

© 2001 The American Physical Society

Authors & Affiliations

M. I. Dykman1, T. Sharpee1, and P. M. Platzman2

  • 1Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan 48824
  • 2Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974

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