Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)

Phys. Rev. Lett. 65, 1020 – Published 20 August 1990
Y.-W. Mo, D. E. Savage, B. S. Swartzentruber, and M. G. Lagally

Abstract

The transition from 2D to 3D growth of Ge on Si(001) has been investigated with scanning tunneling microscopy. A metastable 3D cluster phase with well-defined structure and shape is found. The clusters have a {105} facet structure. Results suggest that these clusters define the kinetic path for formation of ‘‘macroscopic’’ Ge islands.

DOI: http://dx.doi.org/10.1103/PhysRevLett.65.1020

  • Received 23 April 1990
  • Published in the issue dated 20 August 1990

© 1990 The American Physical Society

Authors & Affiliations

Y.-W. Mo, D. E. Savage, B. S. Swartzentruber, and M. G. Lagally

  • University of Wisconsin–Madison, Madison, Wisconsin 53706

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