Growth and equilibrium structures in the epitaxy of Si on Si(001)

Phys. Rev. Lett. 63, 2393 – Published 20 November 1989
Y.-W. Mo, B. S. Swartzentruber, R. Kariotis, M. B. Webb, and M. G. Lagally

Abstract

Scanning-tunneling-microscopy measurements of submonolayer growth of Si on Si(001) show anisotropic island shapes. From coarsening experiments it is determined that these shapes are a consequence of the growth kinetics. They can be explained by a lateral accommodation coefficient for atoms arriving at the edge of islands that differs by an order of magnitude at the ends and at the sides of dimer rows.

DOI: http://dx.doi.org/10.1103/PhysRevLett.63.2393

  • Received 17 August 1989
  • Published in the issue dated 20 November 1989

© 1989 The American Physical Society

Authors & Affiliations

Y.-W. Mo, B. S. Swartzentruber, R. Kariotis, M. B. Webb, and M. G. Lagally

  • University of Wisconsin, Madison, Wisconsin 53706

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