Geometric and Local Electronic Structure of Si(111)-As

Phys. Rev. Lett. 60, 116 – Published 11 January 1988
Russell S. Becker, Brian S. Swartzentruber, James S. Vickers, Mark S. Hybertsen, and Steven G. Louie

Abstract

The Si(111)-As surface is imaged by scanning tunneling microscopy under UHV conditions. A threefold-symmetric 1 × 1 structure is observed, consistent with models suggesting substitution of As for Si in the outer half of the top double layer. No evidence for residual stacking faults on the scale of the 7 × 7 mesh is detected, but atomic debris, interpreted as displaced Si atoms, is seen. I-V characteristics of the junction show features separated by 1.9-2.3 eV consistent with an empty surface state in the projected gap and a filled state resonant with the bulk as predicted by self-energy calculations for this surface.

DOI: http://dx.doi.org/10.1103/PhysRevLett.60.116

  • Received 15 September 1987
  • Published in the issue dated 11 January 1988

© 1988 The American Physical Society

Authors & Affiliations

Russell S. Becker, Brian S. Swartzentruber*, James S. Vickers, and Mark S. Hybertsen

  • AT&T Bell Laboratories, Murray Hill, New Jersey 07974

Steven G. Louie

  • Department of Physics, University of California, Berkeley, California 94720
  • Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, Berkeley, California 94720

  • *Now at the University of Wisconsin, Madison, WI 53706.

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