New Reconstructions on Silicon (111) Surfaces

Phys. Rev. Lett. 57, 1020 – Published 25 August 1986
R. S. Becker, J. A. Golovchenko, G. S. Higashi, and B. S. Swartzentruber

Abstract

We report the first observation of a class of new reconstructions on clean silicon (111) surfaces. The surfaces are prepared by a combination of laser and thermal annealing and the new structures are studied with a tunneling microscope. c-(4×2)and(2×2) regions populate the ordered parts of the surface directly after laser annealing. Subsequent partial thermal anneals result in a surface containing (5×5), (7×7), (9×9), and other intermediate structures. These observations' bearing on the connection between germanium and silicon reconstructions is discussed.

DOI: http://dx.doi.org/10.1103/PhysRevLett.57.1020

  • Received 4 June 1986
  • Published in the issue dated 25 August 1986

© 1986 The American Physical Society

Authors & Affiliations

R. S. Becker, J. A. Golovchenko, G. S. Higashi, and B. S. Swartzentruber

  • AT&T Bell Laboratories, Murray Hill, New Jersey 07974

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