Approaching the intrinsic band gap in suspended high-mobility graphene nanoribbons

Phys. Rev. B 84, 125411 – Published 6 September 2011
Ming-Wei Lin, Cheng Ling, Luis A. Agapito, Nicholas Kioussis, Yiyang Zhang, Mark Ming-Cheng Cheng, Wei L. Wang, Efthimios Kaxiras, and Zhixian Zhou

Abstract

We report electrical transport measurements on a suspended ultra-low-disorder graphene nanoribbon (GNR) with nearly atomically smooth edges that reveal a high mobility exceeding 3000 cm2 V1 s1 and an intrinsic band gap. The experimentally derived band gap is in quantitative agreement with the results of our electronic structure calculations on chiral GNRs with comparable width taking into account the electron-electron interactions, indicating that the origin of the band gap in nonarmchair GNRs is partially due to the magnetic zigzag edges.

DOI: http://dx.doi.org/10.1103/PhysRevB.84.125411

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  • Received 26 May 2011
  • Revised 31 July 2011
  • Published 6 September 2011

©2011 American Physical Society

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Authors & Affiliations

Ming-Wei Lin1, Cheng Ling1, Luis A. Agapito2, Nicholas Kioussis2, Yiyang Zhang1,3, Mark Ming-Cheng Cheng3, Wei L. Wang4, Efthimios Kaxiras4, and Zhixian Zhou1,*

  • 1Department of Physics and Astronomy, Wayne State University, Detroit, Michigan 48201, USA
  • 2Department of Physics, California State University, Northridge, California 91330, USA
  • 3Department of Electrical and Computer Engineering, Wayne State University, Detroit, Michigan 48202, USA
  • 4Department of Physics and School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA

  • *zxzhou@wayne.edu

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