Thermal transport in a semiconductor heterostructure measured by time-resolved x-ray diffraction

Y. M. Sheu, S. H. Lee, J. K. Wahlstrand, D. A. Walko, E. C. Landahl, D. A. Arms, M. Reason, R. S. Goldman, and D. A. Reis
Phys. Rev. B 78, 045317 – Published 21 July 2008


We report studies of thermal transport across the interface of a semiconductor heterostructure using x-ray diffraction to measure the time-dependent lattice expansion after ultrafast laser excitation. Femtosecond laser pulses are used to rapidly and locally heat the substrate at the buried interface of an Al0.3Ga0.7As/GaAs heterostructure grown by molecular-beam epitaxy. High-resolution time-resolved x-ray diffraction is used to study the heating and cooling of the film and substrate independently. The data are compared with a simple model for the thermal transport incorporated into dynamical diffraction calculations allowing us to extract the room-temperature cross-plane film thermal conductivity. The value is 40% lower than that extrapolated from prior results on liquid-phase epitaxy grown samples of varying concentrations.

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  • Received 17 December 2007


Authors & Affiliations

Y. M. Sheu1, S. H. Lee2, J. K. Wahlstrand1, D. A. Walko3, E. C. Landahl3,*, D. A. Arms3, M. Reason4, R. S. Goldman4, and D. A. Reis1

  • 1FOCUS Center and Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040, USA
  • 2Length/Time Metrology Group, Korea Research Institute of Standards and Science, Daejeon 305-600, Republic of Korea
  • 3Argonne National Laboratory, Argonne, Illinois 60439, USA
  • 4Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136, USA

  • *Present address: Department of Physics, DePaul University, 211 Byrne Hall, 2219 N. Kenmore, Chicago, Illinois 60614, USA.

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Vol. 78, Iss. 4 — 15 July 2008

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