Interaction of Se and GaSe with Si(111)

Phys. Rev. B 61, 7215 – Published 15 March 2000
Shuang Meng, B. R. Schroeder, and Marjorie A. Olmstead


Deposition of Se and GaSe on Si(111)7×7 surfaces was studied with low-energy electron diffraction, x-ray photoelectron spectroscopy, and x-ray photoelectron diffraction to probe initial nucleation and interface structure for GaSe/Si(111) heteroepitaxy. Room-temperature deposition of Se on Si(111)7×7 results in an amorphous film. Subsequent annealing leads to Se evaporation without ordering or interdiffusion. Se deposition at 450°C saturates at submonolayer coverage with no diffusion of Se into the substrate. There is no clear evidence of ordered sites for the Se. Growth of GaSe on Si(111)7×7 above 500°C results in a pseudomorphic bilayer, with Si-Ga-Se bonding. Additional GaSe does not stick to the bilayer above 525°C. The resulting Se lone pair at the surface leads to an ideally passivated surface similar to As/Si(111). This stable surface is similar to the layer termination in bulk GaSe. The single domain bilayer is oriented with the Ga-Se bond parallel to the substrate Si-Si bond.


  • Received 5 August 1999
  • Revised 7 December 1999
  • Published in the issue dated 15 March 2000

© 2000 The American Physical Society

Authors & Affiliations

Shuang Meng, B. R. Schroeder, and Marjorie A. Olmstead

  • Department of Physics, University of Washington, Box 351560, Seattle, Washington 98195

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