Effect of X radiation on the plastic deformation of II-VI compounds

Phys. Rev. B 53, 15401 – Published 15 June 1996
V. F. Petrenko, N. N. Khusnatdinov, and I. Baker

Abstract

This paper examines the effects of x rays on the plastic deformation of single crystals of II-VI semiconductors. It was found that x-ray excitation of CdTe, CdS, ZnS, and ZnSe causes significant hardening, with a decrease in the rate of plastic deformation up to two orders of magnitude, and an increase in the resolved shear stress up to 90%. The hardening is almost completely reversible. The dependencies of the phenomenon on the slip systems, plastic strain, and the current and voltage of the x-ray source are reported along with results on the x-ray conductivity and dislocation currents which were recorded simultaneously with the stress and strain diagrams. © 1996 The American Physical Society.

DOI: http://dx.doi.org/10.1103/PhysRevB.53.15401

  • Received 7 March 1996
  • Published in the issue dated 15 June 1996

© 1996 The American Physical Society

Authors & Affiliations

V. F. Petrenko, N. N. Khusnatdinov, and I. Baker

  • Thayer School of Engineering, Dartmouth College, Hanover, New Hampshire 03755

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