Layer-by-layer resolved core-level shifts in CaF2 and SrF2 on Si(111): Theory and experiment

Phys. Rev. B 50, 11052 – Published 15 October 1994
Eli Rotenberg, J. D. Denlinger, M. Leskovar, U. Hessinger, and Marjorie A. Olmstead

Abstract

Using x-ray-photoelectron spectroscopy and Auger-electron spectroscopy, we have resolved surface, bulk, and interface Ca and F core-level emission in thin films (3–8 triple layers) of CaF2 and SrF2 on Si(111). We confirmed these assignments using x-ray-photoelectron diffraction (XPD) and surface modification. XPD was also used to identify the growth modes of the films as being either laminar or layer plus islands; in the latter case we have resolved buried and uncovered interface F and Ca/Sr emission. We compare the observed energy differences between surface, bulk, and interface emission to theoretical estimates of the extra-atomic contributions to emission energies. We find excellent agreement considering only the Madelung (electrostatic) potentials for the initial-state contribution and polarization response for the final-state contribution, including the effect of tetragonal strain. Small discrepancies for emission from metal atoms bonded to the Si substrate are interpreted in terms of chemical shifts.

DOI: http://dx.doi.org/10.1103/PhysRevB.50.11052

  • Received 23 February 1994
  • Published in the issue dated 15 October 1994

© 1994 The American Physical Society

Authors & Affiliations

Eli Rotenberg

  • Department of Physics, University of California, Berkeley, California 94720

J. D. Denlinger

  • Department of Physics, University of Wisconsin, Milwaukee, Wisconsin 53211

M. Leskovar, U. Hessinger, and Marjorie A. Olmstead

  • Department of Physics, FM-15, University of Washington, Seattle, Washington 98195

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