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CaF2-Si(111) as a model ionic-covalent system: Transition from chemisorption to epitaxy

Phys. Rev. B 48, 5716(R) – Published 15 August 1993
G. C. L. Wong, D. Loretto, Eli Rotenberg, Marjorie A. Olmstead, and C. A. Lucas

Abstract

The demands of chemisorption and epitaxy are quite different for electronically dissimilar systems. The transition between these two regimes in CaF2-Si(111) is studied with transmission-electron microscopy and photoemission. Changes in the electronic structure of the evolving growth surface are expressed in the composite growth mode, a Stranski-Krastanow pathway to layer-by-layer growth, which begins with CaF2 coherent island formation on a Si-CaF layer. After this transition, layer-by-layer CaF2 homoepitaxy is possible even at room temperature, and the critical thickness can be extended.

DOI: http://dx.doi.org/10.1103/PhysRevB.48.5716

  • Received 20 May 1993
  • Published in the issue dated 15 August 1993

© 1993 The American Physical Society

Authors & Affiliations

G. C. L. Wong

  • Materials Sciences Division, Center for Advanced Materials, Lawrence Berkeley Laboratory, Berkeley, California 94720
  • Department of Physics, University of California, Berkeley, California 94720

D. Loretto

  • Materials Sciences Division, Center for Advanced Materials, Lawrence Berkeley Laboratory, Berkeley, California 94720

Eli Rotenberg

  • Materials Sciences Division, Center for Advanced Materials, Lawrence Berkeley Laboratory, Berkeley, California 94720
  • Department of Physics, University of California, Berkeley, California 94720

Marjorie A. Olmstead

  • Materials Sciences Division, Center for Advanced Materials, Lawrence Berkeley Laboratory, Berkeley, California 94720
  • Department of Physics, FM-15, University of Washington, Seattle, Washington 98195

C. A. Lucas

  • Materials Sciences Division, Center for Advanced Materials, Lawrence Berkeley Laboratory, Berkeley, California 94720

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