The demands of chemisorption and epitaxy are quite different for electronically dissimilar systems. The transition between these two regimes in -Si(111) is studied with transmission-electron microscopy and photoemission. Changes in the electronic structure of the evolving growth surface are expressed in the composite growth mode, a Stranski-Krastanow pathway to layer-by-layer growth, which begins with coherent island formation on a Si-CaF layer. After this transition, layer-by-layer homoepitaxy is possible even at room temperature, and the critical thickness can be extended.
- Received 20 May 1993
- Published in the issue dated 15 August 1993
© 1993 The American Physical Society