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Atomic-size effects on the growth of SrF2 and (Ca,Sr)F2 on Si(111)

Phys. Rev. B 43, 7335(R) – Published 15 March 1991
J. D. Denlinger, Marjorie A. Olmstead, Eli Rotenberg, J. R. Patel, and E. Fontes


Strain-induced lattice relaxation during overlayer growth is investigated by in situ monitoring of SrF2 and CaxSr1-xF2 growth on Si(111) with x-ray standing-wave fluorescence and low-energy electron diffracton. Submonolayer films show both intrinsic lateral disorder and variable interface stoichiometry with discommensuration parallel to the surface after completion of the first monolayer. In contrast, local commensuration is observed for Ca-rich alloy films. In the alloy, Sr and Ca occupy different sites in the first monolayer, but have similar average positions in subsequent layers.

DOI: http://dx.doi.org/10.1103/PhysRevB.43.7335

  • Received 24 September 1990
  • Published in the issue dated 15 March 1991

© 1991 The American Physical Society

Authors & Affiliations

J. D. Denlinger, Marjorie A. Olmstead, and Eli Rotenberg

  • Department of Physics, University of California, Berkeley, California 94720

J. R. Patel and E. Fontes

  • AT&T Bell Laboratories, Murray Hill, New Jersey 07974

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