Piezoresistance Effect in Germanium and Silicon

Phys. Rev. 94, 42 – Published 1 April 1954
Charles S. Smith

Abstract

Uniaxial tension causes a change of resistivity in silicon and germanium of both n and p types. The complete tensor piezoresistance has been determined experimentally for these materials and expressed in terms of the pressure coefficient of resistivity and two simple shear coefficients. One of the shear coefficients for each of the materials is exceptionally large and cannot be explained in terms of previously known mechanisms. A possible microscopic mechanism proposed by C. Herring which could account for one large shear constant is discussed. This so called electron transfer effect arises in the structure of the energy bands of these semiconductors, and piezoresistance may therefore give important direct experimental information about this structure.

DOI: http://dx.doi.org/10.1103/PhysRev.94.42

  • Received 30 December 1953
  • Published in the issue dated April 1954

© 1954 The American Physical Society

Authors & Affiliations

Charles S. Smith

  • Bell Telephone Laboratories, Murray Hill, New Jersey

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